Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions
Identifieur interne : 013A49 ( Main/Repository ); précédent : 013A48; suivant : 013A50Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions
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Abstract
We have studied the structural and optical properties of InxGa1-xN/GaN multiple quantum wells with different In compositions of 8.8%, 12.0%, and 13.3% by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), stimulated emission (SE), and time-resolved PL spectroscopy. As the In composition increases, the superlattice peaks in HRXRD measurements and the PLE band edge broaden, indicating the deterioration of interface quality due to the difficulty of uniform In incorporation into the GaN layer. However, the lower room-temperature SE threshold densities of the higher In concentration samples indicate that the effect of In suppressing nonradiative recombination overcomes the drawbacks associated with increasing interface imperfection. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural and optical characteristics of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells with different In compositions</title><author><name sortKey="Kwon, Yong Hwan" uniqKey="Kwon Y">Yong-Hwan Kwon</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Gainer, G H" uniqKey="Gainer G">G. H. Gainer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Bidnyk, S" uniqKey="Bidnyk S">S. Bidnyk</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Cho, Y H" uniqKey="Cho Y">Y. H. Cho</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Song, J J" uniqKey="Song J">J. J. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Hansen, M" uniqKey="Hansen M">M. Hansen</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0461604</idno><date when="1999-10-25">1999-10-25</date><idno type="stanalyst">PASCAL 99-0461604 AIP</idno><idno type="RBID">Pascal:99-0461604</idno><idno type="wicri:Area/Main/Corpus">014418</idno><idno type="wicri:Area/Main/Repository">013A49</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Nonradiative transitions</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term><term>Stimulated emission</term><term>Time resolved spectra</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>6865</term><term>7847</term><term>7845</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Superréseau semiconducteur</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Diffraction RX</term><term>Transition non radiative</term><term>Emission stimulée</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied the structural and optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells with different In compositions of 8.8%, 12.0%, and 13.3% by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), stimulated emission (SE), and time-resolved PL spectroscopy. As the In composition increases, the superlattice peaks in HRXRD measurements and the PLE band edge broaden, indicating the deterioration of interface quality due to the difficulty of uniform In incorporation into the GaN layer. However, the lower room-temperature SE threshold densities of the higher In concentration samples indicate that the effect of In suppressing nonradiative recombination overcomes the drawbacks associated with increasing interface imperfection. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural and optical characteristics of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells with different In compositions</s1></fA08><fA11 i1="01" i2="1"><s1>KWON (Yong-Hwan)</s1></fA11><fA11 i1="02" i2="1"><s1>GAINER (G. H.)</s1></fA11><fA11 i1="03" i2="1"><s1>BIDNYK (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHO (Y. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>SONG (J. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>HANSEN (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>DENBAARS (S. P.)</s1></fA11><fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>2545-2547</s1></fA20><fA21><s1>1999-10-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0461604</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied the structural and optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells with different In compositions of 8.8%, 12.0%, and 13.3% by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), stimulated emission (SE), and time-resolved PL spectroscopy. As the In composition increases, the superlattice peaks in HRXRD measurements and the PLE band edge broaden, indicating the deterioration of interface quality due to the difficulty of uniform In incorporation into the GaN layer. 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